Silicon based system in package: Improvement of passive integration process to avoid TBMS failure
| Autor: | Vincent Georgel, Sophie Ledain, Karine Danilo, Matthieu Nongaillard, Christian Gautier, Sébastien Jacqueline |
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| Rok vydání: | 2008 |
| Předmět: |
Engineering
business.industry Process (engineering) Structural engineering Temperature cycling Condensed Matter Physics Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials Reliability engineering Silicon based Stress relief Substrate (building) System in package Stress test Electrical and Electronic Engineering Safety Risk Reliability and Quality business |
| Zdroj: | Microelectronics Reliability. 48:1258-1262 |
| ISSN: | 0026-2714 |
| DOI: | 10.1016/j.microrel.2008.07.033 |
| Popis: | Because of its large dimension and its high level of integration, the PICS (Passive Integration Connecting Substrate) developed by NXP prone to top to bottom metal short (TBMS) failure during temperature cycling test. Several options of process modifications as well as new design rules and stress relief patterns for preventing TBMS failure are described. These countermeasures have been evaluated under high thermo-mechanical stress test. The results of these evaluations are also presented in this paper. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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