Electrical conductivity, dielectric properties and structure of GeSe3Sb2Se3-ZnSe thin films
| Autor: | M M Roushdy, S.A. Fayek, M.R. Balboul, H.M. Hosni |
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| Rok vydání: | 2013 |
| Předmět: |
Materials science
Metals and Alloys Analytical chemistry Surfaces and Interfaces Activation energy Dielectric Conductivity Atmospheric temperature range Surfaces Coatings and Films Electronic Optical and Magnetic Materials Amorphous solid Crystallography Electrical resistivity and conductivity X-ray crystallography Materials Chemistry Dielectric loss |
| Zdroj: | Thin Solid Films. 542:310-316 |
| ISSN: | 0040-6090 |
| DOI: | 10.1016/j.tsf.2013.06.095 |
| Popis: | Electrical conductivity and dielectric properties of the chalcogenides GeSe 3 , Sb 2 Se 3 , ZnSe, (GeSe 3 ) 80 (Sb 2 Se 3 ) 20 and (GeSe 3 ) 70 (Sb 2 Se 3 ) 10 (ZnSe) 20 thin films are investigated. The effect of ZnSe incorporation with both GeSe 3 , Sb 2 Se 3 results in amorphous (GeSe 3 ) 70 (Sb 2 Se 3 ) 10 (ZnSe) 20 composition as obtained from the X-ray diffraction analysis. The estimated DC activation energy, Δ E DC , in the temperature range from 300 to 373 K is found to decrease from 0.72 eV for (GeSe 3 ) 80 (Sb 2 Se 3 ) 20 to 0.65 eV for (GeSe 3 ) 70 (Sb 2 Se 3 ) 10 (ZnSe) 20 . However, the estimated AC activation energy, Δ E AC , over the same temperature range and a frequency range from 0.6 to 1000 kHz, exhibits an opposite trend as its values increase for (GeSe 3 ) 70 (Sb 2 Se 3 ) 10 (ZnSe) 20 as compared with that of (GeSe 3 ) 80 (Sb 2 Se 3 ) 20 composition. Dielectric constant, e 1 , and dielectric loss, e 2 , behaviour are investigated as well over the same ranges of temperature and frequency. |
| Databáze: | OpenAIRE |
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