Glassy magnetic state and negative temperature coefficient of resistivity in Mn3+δIn
| Autor: | Surasree Sadhukhan, Saurav Giri, Subham Majumdar, G. S. Okram, P. Dutta, Sudipta Kanungo, Snehashish Chatterjee, V. Ganesan, Souvik Chatterjee, Manju Mishra Patidar |
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| Rok vydání: | 2020 |
| Předmět: |
Materials science
Condensed matter physics Magnetic moment Fermi energy 02 engineering and technology Electronic structure 021001 nanoscience & nanotechnology 01 natural sciences Condensed Matter::Materials Science Electrical resistivity and conductivity Ferrimagnetism 0103 physical sciences Antiferromagnetism Condensed Matter::Strongly Correlated Electrons 010306 general physics 0210 nano-technology Ground state Temperature coefficient |
| Zdroj: | Physical Review B. 102 |
| ISSN: | 2469-9969 2469-9950 |
| DOI: | 10.1103/physrevb.102.214443 |
| Popis: | The complex metallic alloy ${\mathrm{Mn}}_{3}\mathrm{In}$ has recently attracted attention for being a probable candidate for the fully compensated half-metallic ferrimagnet. The compound is associated with a rather unusual negative coefficient of resistivity approximately above the ferrimagnetic, ${T}_{C}=80\phantom{\rule{0.28em}{0ex}}\mathrm{K}$. Our investigation indicates that that the ground state of the alloy is spin-glass like, which possibly coexists with the ferrimagnetic state. The carrier density obtained from the Hall-effect measurement shows a jump below ${T}_{C}$; afterward, it gradually increases with lowering temperature and shows a saturating tendency at the lowest temperature. The electronic structure calculations indicate that, at the Fermi energy, dominant contributions come from minority-spin channels with larger bandwidth. In contrast, very weak but nonzero states arise from the majority-spin channel, and half metallicity can be ruled out. The calculations also found that the antiferromagnetic alignment of Mn spins with nonzero resultant magnetic moment confirms the ferrimagnetic nature consistent with the experimental results. The high-temperature phase with negative temperature coefficient of resistivity can be related to the localization of charge carriers through electron-phonon interactions. |
| Databáze: | OpenAIRE |
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