High-speed InP/lnGaAs heterojunction bipolar transistor utilizing nonalloyed contacts on n+-InP contacting layers
| Autor: | C. A. Martino, Milton Feng, D.A. Ahmari, M.T. Fresina, Douglas W. Barlage, S. Thomas, G. E. Stillman |
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| Rok vydání: | 1996 |
| Předmět: |
Materials science
Silicon Heterostructure-emitter bipolar transistor business.industry Heterojunction bipolar transistor Bipolar junction transistor Contact resistance Doping chemistry.chemical_element Condensed Matter Physics Electronic Optical and Magnetic Materials chemistry.chemical_compound chemistry Ternary compound Materials Chemistry Optoelectronics Electrical and Electronic Engineering business Common emitter |
| Zdroj: | Journal of Electronic Materials. 25:1637-1639 |
| ISSN: | 1543-186X 0361-5235 |
| DOI: | 10.1007/bf02655589 |
| Popis: | We have demonstrated a high-speed InP/lnGaAs heterojunction bipolar transistor with nonalloyed TiPtAu contacts on n+-InP emitter and collector contacting layers. The use of SiBr4 as a silicon doping source enabled the formation of low resistance (pc |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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