| Autor: |
P. Kapetanopoulos, James Milnes, Graham W. Smith, M. Ingle, J. Howorth, P. Simpson |
| Rok vydání: |
2008 |
| Předmět: |
|
| Zdroj: |
SPIE Proceedings. |
| ISSN: |
0277-786X |
| Popis: |
Gate units designed using a push-pull MOSFET output for single nanosecond ultra-fast electronic shuttering (or "gating") of image intensifiers or photomultipliers normally have to be tuned to fit the capacitance load of the detector being gated. Photek has developed a self-tuning gate unit that automatically achieves the fastest possible gating speed for any capacitance load up to 250 pF. We demonstrate an exposure time of 2 ns for a 9 mm × 9 mm segment on a 40 mm diameter detector divided into 8 segments for high speed framing. The same gate unit is capable of an exposure time of 10 ns for a full 75 mm diameter working area detector. We also demonstrate transition times in single nanoseconds from "OFF" to fully "ON" on large area ultrafast photomultipliers tubes. Sub-nanosecond gate units based on avalanche technology are often limited to short gate exposures or are unable to achieve d.c. operation. This new development has a fully flexible output that follows the TTL trigger input right up to d.c. exposure and is capable of repetition rates up to 200 KHz. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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