| Autor: |
Frederick G. Anderson, Robert A. Groves, Shyam Parthasarathy, Ananth Sundaram, Balaji Swaminathan, Randy L. Wolf |
| Rok vydání: |
2010 |
| Předmět: |
|
| Zdroj: |
2010 International Electron Devices Meeting. |
| DOI: |
10.1109/iedm.2010.5703320 |
| Popis: |
This paper describes a large signal Silicon on Insulator (SOI) substrate modeling methodology for high power circuit applications such as RF Switches. It is shown that the use of a varactor in place of a linear capacitor representing the buried oxide (BOX) improves the harmonic predictions of the circuit. The new substrate model is validated against 2nd and 3rd harmonics of an RF SOI switch operating at 890 MHz. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
|
