Analysis of a high-performance ultra-thin body ultra-thin box silicon-on-insulator MOSFET with the lateral dual-gates: featuring the suppression of the DIBL
| Autor: | Li Geng, Sufen Wei, Cheng-Fu Yang, Guohe Zhang, Zhibiao Shao |
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| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
Ultra thin body Materials science business.industry Electron concentration Electrical engineering Silicon on insulator 02 engineering and technology 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Electronic Optical and Magnetic Materials Hardware and Architecture 0103 physical sciences MOSFET Optoelectronics Electrical performance New device Electrical and Electronic Engineering 0210 nano-technology Electronic band structure business Voltage |
| Zdroj: | Microsystem Technologies. 24:3949-3956 |
| ISSN: | 1432-1858 0946-7076 |
| DOI: | 10.1007/s00542-017-3532-4 |
| Popis: | An inspiring UTBB SOI MOSFET structure with enhanced immunity to the drain-induced barrier lowering (DIBL) is analyzed. The structure includes the dual-gates in the lateral direction. The voltage difference is applied between the dual-gates, through which the electrostatic potential and the energy band along the channel are modified and the electrical performance is boosted. The electrical characteristics are investigated by measuring the electron concentration, the conduction band energy level, and the potential at the front-surface. The impact of the negative voltage bias applied to the right gate on the performance of the new device is studied, and compared to that of the conventional ultra-thin body ultra-thin box silicon-on-insulator (UTBB SOI) devices. The results reveal that the undesirable DIBL values are lower in this innovative device than that in the conventional UTBB SOI MOSFET. |
| Databáze: | OpenAIRE |
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