Efficient and robust algorithms for Monte Carlo and e-beam lithography simulation
| Autor: | M.V. Silakov, V.V. Ivin, L. Siragusa, D. J. Resnick, K.N. Nordquist, N.V. Vorotnikova |
|---|---|
| Rok vydání: | 2001 |
| Předmět: |
Point spread function
Physics Computer simulation Monte Carlo method Function (mathematics) Condensed Matter Physics Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials Convolution Resist Electrical and Electronic Engineering Lithography Algorithm Electron-beam lithography |
| Zdroj: | Microelectronic Engineering. :355-360 |
| ISSN: | 0167-9317 |
| Popis: | A traditional method of e-beam lithography simulation uses the convolution of beam point spread function (a.k.a. “proximity function”) with the electron dose image to calculate density of energy deposited in resist. The proximity function is calculated by the Monte Carlo (MC) technique and a large number of simulated electrons are required to provide sufficient calculation accuracy. The purpose of this work is to describe effective algorithmic improvements that increase the performance of MC simulations while maintaining high accuracy of the calculated proximity function. We also consider the issue of robust integration when convolving the proximity function with electron dose image. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|
Full Text from ScienceDirect