| Popis: |
Publisher Summary The early success with developing porous silicon was soon tempered by the realization that an understanding of its formation mechanism and the nature of its fluorescence was more complex than originally thought. Though it could be formed very easily, an understanding of its fundamental nature was considerably less forthcoming. Additionally, attempts to develop this material into effective photonic devices proved discouraging as the efficiencies of light emitting diode (LED) structures were far less than that which would be necessary to compete with comparable GaAs devices. Porous silicon work has continued in several labs and announcements regarding improved efficiencies are promising. The efficiency of poSi LEDs continues to improve, with some device performance reaching several percent efficiency as measured externally. Oxidized poSi is much more stable than the as-prepared material and numerous schemes exist to create efficient electron injection junctions for EL devices. Its potential applications have been widely demonstrated. |
