Effect of Gate Voltage on the Photovoltaic Performance of GaAs-based Schottky Junction Solar Cells
| Autor: | Vishal Saravade, Chuanle Zhou, Ian T. Ferguson, Andrew Woode, Amirhossein Ghods |
|---|---|
| Rok vydání: | 2019 |
| Předmět: |
Materials science
business.industry Schottky barrier Photovoltaic system Schottky diode Hardware_PERFORMANCEANDRELIABILITY 02 engineering and technology Electron Condensed Matter::Mesoscopic Systems and Quantum Hall Effect 010402 general chemistry 021001 nanoscience & nanotechnology Gate voltage 01 natural sciences 0104 chemical sciences Computer Science::Hardware Architecture Computer Science::Emerging Technologies Hardware_INTEGRATEDCIRCUITS Optoelectronics Hardware_ARITHMETICANDLOGICSTRUCTURES Current (fluid) 0210 nano-technology business Current density Hardware_LOGICDESIGN Voltage |
| Zdroj: | 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC). |
| DOI: | 10.1109/pvsc40753.2019.8980770 |
| Popis: | In this paper, the effect of external gate voltage on GaAs-based metal-semiconductor (MS) Schottky solar cells is investigated. Subsequent changes in photovoltaic characteristic properties of the solar cells are extracted, reported and explained. Under positive gate voltages, the open-circuit voltage and short-circuit current density measured at collector are significantly increased due to the drift of holes from gate junction to the collector (forward bias condition of gate junction). However, there is slight increase in open-circuit voltage under reverse gate voltages, where only thermally generated electrons drift toward the collector junction. Moreover, negative gate voltage on insulated gate contact has resulted into slight increase in open-circuit voltage and short-circuit current compared to zero gate voltage. These results demonstrate the potential to change and control the performance characteristics of Schottky junction solar cells by using gated layers. |
| Databáze: | OpenAIRE |
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