Effects of High-k Dielectric Materials on Electrical Characteristics of DG n-FinFETs
| Autor: | Salvatore Patanè, Nour El Islam Boukortt, Baghdad Hadri |
|---|---|
| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
Channel length modulation Computer science business.industry Transconductance Transistor Gate dielectric Drain-induced barrier lowering 02 engineering and technology Dielectric 021001 nanoscience & nanotechnology 01 natural sciences Subthreshold slope law.invention Threshold voltage Gate oxide law 0103 physical sciences Optoelectronics 0210 nano-technology business Leakage (electronics) High-κ dielectric |
| Zdroj: | International Journal of Computer Applications. 139:28-32 |
| ISSN: | 0975-8887 |
| DOI: | 10.5120/ijca2016909385 |
| Popis: | nanoscale n-channel double gate fin field-effect transistor (FinFET) structures and their sensitivity to gate dielectric materials with different channel materials using SiGe and 3CSiC in the channel region. In this work, the numerical tool Atlas Silvaco was used to simulate the device in three dimensions and evaluate the electrical characteristics of the device at 300K. The influence of the gate dielectrics on threshold voltage roll-off, subthreshold slope, transconductance, drain induced barrier lowering, leakage current, on-current, and on/off current ratio has been investigated. The simulation results show that high drain current and transconductance were obtained with SiGe channel material. The results also show that a higher value of gate dielectric constant can increase the drain current and improve the leakage current. Drain induced barrier lowering is reduced with the increase in gate dielectric constant. It can be noticed with different and useful results which led researchers to further manufacturing process in order to get the complete device. |
| Databáze: | OpenAIRE |
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