| Autor: |
Mrinal K. Das, Joseph John Sumakeris, Bradley Heath, Brett Hull, James Richmond, Charles Scozzie, Bruce Geil |
| Rok vydání: |
2006 |
| Předmět: |
|
| Zdroj: |
Materials Science Forum. :1355-1358 |
| ISSN: |
1662-9752 |
| DOI: |
10.4028/www.scientific.net/msf.527-529.1355 |
| Popis: |
Forward voltage (VF) drift, in which a 4H-SiC PiN diode suffers from an irreversible increase in VF under forward current flow, continues to inhibit commercialization of 4H-SiC PiN diodes. We present our latest efforts at fabricating high blocking voltage (6 kV), high current (up to 50 A) 4H-SiC PiN diodes with the best combination of reverse leakage current (IR), forward voltage at rated current (VF), and VF drift yields. We have achieved greater than 60% total die yield onwafer for 50 A diodes with a chip size greater than 0.7 cm2. A comparison of the temperature dependent conduction and switching characteristics between a 50 A/6 kV 4H-SiC PiN diode and a commercially available 60 A/4.5 kV Si PiN diode is also presented. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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