Lateral GaN Schottky Barrier Diode for Wireless High-Power Transfer Application With High RF/DC Conversion Efficiency: From Circuit Construction and Device Technologies to System Demonstration
| Autor: | Yachao Zhang, Yue Hao, Zhaoke Bian, Kui Dang, Xiaoling Duan, Jincheng Zhang, Hong Zhou, Shan Yin, Tao Zhang, Jiabo Chen, Jing Ning, Shenglei Zhao |
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| Rok vydání: | 2020 |
| Předmět: |
Materials science
business.industry 020208 electrical & electronic engineering Energy conversion efficiency Schottky diode Gallium nitride 02 engineering and technology Diffusion capacitance law.invention chemistry.chemical_compound Rectifier chemistry Control and Systems Engineering law 0202 electrical engineering electronic engineering information engineering Optoelectronics Breakdown voltage Wireless power transfer Electrical and Electronic Engineering business Light-emitting diode |
| Zdroj: | IEEE Transactions on Industrial Electronics. 67:6597-6606 |
| ISSN: | 1557-9948 0278-0046 |
| DOI: | 10.1109/tie.2019.2939968 |
| Popis: | In this article, we have carried out a comprehensive study on the wireless power transfer (WPT) concept from the rectifier circuit construction and state-of-art GaN Schottky barrier diode (SBD) device technology to the WPT system demonstration. Benefited from the wide bandgap, high mobility, and saturation velocity of the gallium nitride (GaN) two-dimensional electron gas, engineered lateral GaN SBD with low turn- on voltage ( V on) of 0.47 V, on -resistance ( R on) of 4 Ω, breakdown voltage of 170 V, and junction capacitance $(C_{j})$ of 0.32 pF at 0 V bias are achieved, which satisfy the fundamental requirements for microwave power rectification. After incorporating the high-performance GaN SBD into the optimized rectifier circuit, high radio frequency (RF)/dc conversion efficiency of 79% is achieved, and the input power of per single GaN SBD is increased by 10X when compared with that of a commercially available silicon (Si) SBD at the same efficiency of 50% and frequency of 2.45 GHz. Based on the rectifier circuit, a microwave power transfer system is constructed with 400 light emitting diodes lighted up, verifying the great promise of adopting high-power GaN SBD for the wireless high-power transfer as an alternative energy-harvesting technique for future WPT application. |
| Databáze: | OpenAIRE |
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