Highly efficient InGaN-based LED with pre-roughening backside of GaN substrate

Autor:	Shuji Nakamura, M.E.A. Samsudin, Asad J. Mughal, James S. Speck, Steven P. DenBaars, Norasmida Ibrahim, Ezzah Azimah Alias, Norzaini Zainal
Rok vydání:	2020
Předmět:	Materials science Fabrication business.industry Optoelectronics Statistical and Nonlinear Physics Quantum efficiency Substrate (electronics) Chemical vapor deposition Forward voltage business Atomic and Molecular Physics and Optics
Zdroj:	Journal of the Optical Society of America B. 37:1614
ISSN:	1520-8540 0740-3224
DOI:	10.1364/josab.381356
Popis:	This work proposes that roughening on the backside of a GaN substrate prior to InGaN-based LED growth not only simplifies fabrication steps for the LED but also cleans the other side of the substrate that was served as the surface growth for the LED. As compared to post-roughening, forward voltage of the LED has reduced at 3.48 V through the pre-roughening. Further, the peak external quantum efficiency of the LED on the pre-roughened substrate is 21.6% at 12 m A / c m 2 , while the LED on the post-roughened GaN substrate is 20.6% at 14 m A / c m 2 .
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::d790a8441a1e786e4069df33d3f0706e https://doi.org/10.1364/josab.381356 Zobrazit plný text záznamu