Transient Radiation Effects on Silicon MESFET Integrated Circuits
| Autor: | J. L. Sampson, W. M. Shedd, D. C. LaPierre |
|---|---|
| Rok vydání: | 1983 |
| Předmět: |
Nuclear and High Energy Physics
Materials science business.industry Electrical engineering Schottky diode Integrated circuit Upset law.invention Read-write memory Nuclear Energy and Engineering law Optoelectronics Field-effect transistor Transient response Static random-access memory Electrical and Electronic Engineering business Shift register |
| Zdroj: | IEEE Transactions on Nuclear Science. 30:4183-4186 |
| ISSN: | 0018-9499 |
| DOI: | 10.1109/tns.1983.4333105 |
| Popis: | An experimental evaluation of the transient radiation upset threshold of silcon MESFET circuits has been performed. Upset thresholds in the range of 2 to 6×108 rad/sec have been observed for shift registers and 1 to 5×107 rad/sec for 1K static memory arrays. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|