A novel gate geometry for the IGBT: the trench planar insulated gate bipolar transistor (TPIGBT)
| Autor: | O. Spulber, E.M.S. Narayanan, S. Hardikar, M.M. De Souza, M. Sweet, S.C. Bose J.V. |
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| Rok vydání: | 1999 |
| Předmět: |
Gate turn-off thyristor
Engineering business.industry Gate dielectric Electrical engineering Time-dependent gate oxide breakdown Electronic Optical and Magnetic Materials Current injection technique Gate oxide Trench Gate driver Optoelectronics Power semiconductor device Electrical and Electronic Engineering business |
| Zdroj: | IEEE Electron Device Letters. 20:580-582 |
| ISSN: | 1558-0563 0741-3106 |
| Popis: | This letter demonstrates a simple way to improve the performance of a planar, fine lithography insulated gate bipolar transistor (IGBT), by incorporating a trench gate between the cathode cells. The results of this new trench-planar IGBT (TPIGBT) clearly demonstrate a significant reduction in the voltage drop without degrading the breakdown voltage. The switching analysis indicates that the TPIGBT represents a good trade-off between planar and trench structures. By separating the trench gate requirements away from the cathode cells, the technology development cycle and costs can be reduced. Furthermore, the reduced cell-width and the shallow trench presents TPIGBT as a cost-effective structure for high-voltage applications. |
| Databáze: | OpenAIRE |
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