Performance and ruggedness of 1200V SiC — Trench — MOSFET

Autor: Thomas Basler, Romain Esteve, Wolfgang Bergner, Dethard Peters, Daniel Kueck, Thomas Aichinger, Ralf Siemieniec
Rok vydání: 2017
Předmět:
Zdroj: 2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD).
Popis: This paper describes a novel SiC trench MOSFET concept. The device is designed to balance low conduction losses with Si-IGBT like reliability. Basic features of the static and dynamic performance as well as short circuit capability of the 45mΩ/1200 V CoolSiC™ MOSFET are presented. The favorable temperature behavior of the on-state resistance combined with a low sensitivity of the switching energies to temperature simplify the design-in. Long-term gate oxide tests reveal a very low extrinsic failure rate well matching the requirements of industrial applications.
Databáze: OpenAIRE