Performance and ruggedness of 1200V SiC — Trench — MOSFET
Autor: | Thomas Basler, Romain Esteve, Wolfgang Bergner, Dethard Peters, Daniel Kueck, Thomas Aichinger, Ralf Siemieniec |
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Rok vydání: | 2017 |
Předmět: |
010302 applied physics
Engineering business.industry 020208 electrical & electronic engineering Failure rate Hardware_PERFORMANCEANDRELIABILITY 02 engineering and technology Thermal conduction 01 natural sciences Reliability (semiconductor) Gate oxide 0103 physical sciences MOSFET Trench Hardware_INTEGRATEDCIRCUITS 0202 electrical engineering electronic engineering information engineering Electronic engineering Optoelectronics business Sensitivity (electronics) Short circuit |
Zdroj: | 2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD). |
Popis: | This paper describes a novel SiC trench MOSFET concept. The device is designed to balance low conduction losses with Si-IGBT like reliability. Basic features of the static and dynamic performance as well as short circuit capability of the 45mΩ/1200 V CoolSiC™ MOSFET are presented. The favorable temperature behavior of the on-state resistance combined with a low sensitivity of the switching energies to temperature simplify the design-in. Long-term gate oxide tests reveal a very low extrinsic failure rate well matching the requirements of industrial applications. |
Databáze: | OpenAIRE |
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