RF-μSR study of muonium charge states and dynamics in Si

Autor:	B. Hitti, C. D. Lamp, Kim H. Chow, T. L. Estle, R. L. Lichti, J. W. Schneider, S. R. Kreitzman, Philippe Mendels
Rok vydání:	1994
Předmět:	Nuclear and High Energy Physics Muon Silicon Chemistry Muonium Doping chemistry.chemical_element Atmospheric temperature range Condensed Matter Physics Atomic and Molecular Physics and Optics Ionization Diamagnetism Physical and Theoretical Chemistry Atomic physics Boron
Zdroj:	Hyperfine Interactions. 86:673-679
ISSN:	1572-9540
DOI:	10.1007/bf02068962
Popis:	The radio frequencyμSR technique developed at TRIUMF was used to measure the temperature dependence of the diamagnetic muon, Mu, and Mu* amplitudes in silicon between 10 K and 500 K. Six samples doped with phosphorus (n-type) and boron (p-type) in the concentration range 1011 to 1015 cm−3 were studied. In pure Si a very good fit over the whole temperature range is obtained from a model that includes the ionization of Mu* and Mu to a bond centeredμ+ followed at high temperature by charge exchange involving Mu.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::d781020622f5b686b33554d92309d2c0 https://doi.org/10.1007/bf02068962 Zobrazit plný text záznamu Full text from SpringerLink