Influence of deposition conditions on electrical and mechanical properties of Sm2O3-doped CeO2 thin films prepared by EB-PVD (+IBAD) methods. Part 1: Effective relative permittivity
Autor: | Mária Hartmanová, Vojtech Nádaždy, Catina Mansilla, František Kundracik |
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Rok vydání: | 2013 |
Předmět: |
Materials science
Deep-level transient spectroscopy Dopant Doping Analytical chemistry General Physics and Astronomy Relative permittivity Surfaces and Interfaces General Chemistry Condensed Matter Physics Capacitance Surfaces Coatings and Films Dielectric spectroscopy Deposition (phase transition) Thin film |
Zdroj: | Applied Surface Science. 269:65-71 |
ISSN: | 0169-4332 |
DOI: | 10.1016/j.apsusc.2012.10.056 |
Popis: | Study is devoted to the effective relative permittivity ɛr of CeO2 + x. Sm2O3 thin films prepared by electron-beam physical vapour deposition and ionic beam-assisted deposition methods; ɛr was investigated by three independent ways from the bulk parallel capacitance Cp, impedance capacitance Cimp, and accumulation capacitance Cacc in dependence on the deposition conditions (deposition temperature, dopant amount x and Ar+ ion bombardment during the film deposition) used. Investigations were performed using impedance spectroscopy, capacitance–voltage and current–voltage characteristics as well as deep level transient spectroscopy. Results obtained are described and discussed. |
Databáze: | OpenAIRE |
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