Dynamical Oscillations of X-Ray Integrated Intensity in Laue Diffraction and Their Temperature Dependences for Si Dislocation Crystals

Autor:	V. M. Skidan, N. M. Olekhnovich, L. D. Puzenkova, A. L. Karpei
Rok vydání:	1982
Předmět:	Physics Silicon Condensed matter physics Oscillation chemistry.chemical_element Atmospheric temperature range Condensed Matter Physics Electronic Optical and Magnetic Materials Crystal symbols.namesake Reflection (mathematics) chemistry X-ray crystallography symbols Dislocation Debye model
Zdroj:	physica status solidi (a). 72:463-467
ISSN:	1521-396X 0031-8965
DOI:	10.1002/pssa.2210720204
Popis:	Results of a study of thickness oscillations (Pendellosung beats) of the X-ray integrated intensity for the symmetrical Laue case of silicon dislocation single crystals are presented over the temperature range from 100 to 295 K. The oscillation period is found to increase with the dislocation density and the reflection order. It is shown that the Debye temperature θM can be precisely determined by the temperature shift of the oscillation patterns for dislocation crystals. The value of θM, obtained from the temperature dependence of Pendellosung intensity beats for a real crystal agrees well with that for a perfect one. [Russian Text Ignored].
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::d776ea43989f0797faa6c375db51b4c2 https://doi.org/10.1002/pssa.2210720204 Zobrazit plný text záznamu Plný text