Integration of optical amplifiers and passive waveguide devices on InP using selective area chemical beam epitaxy

Autor:	H Vonk, MK Meint Smit, C. A. Verschuren, Ys Oei, PJ Harmsma, M.R. Leys
Rok vydání:	2003
Předmět:	Optical amplifier Materials science business.industry Laser Waveguide (optics) Chemical beam epitaxy law.invention Gallium arsenide Semiconductor laser theory chemistry.chemical_compound chemistry Stack (abstract data type) law Optoelectronics Stimulated emission business
Zdroj:	Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362).
DOI:	10.1109/iciprm.1999.773710
Popis:	High quality butt joints were fabricated in the InGaAsP system using a Selective Area Chemical Beam Epitaxy (SA-CBE) regrowth step. Coupling losses were as low as 0.1 dB/interface for butt joints between similar transparent layer stacks. Active and passive regions were defined on a single chip using SA-CBE. Semiconductor optical amplifiers (SOAs) and transparent waveguides were fabricated in their appropriate regions. Extended cavity lasers, consisting of SOAs with passive waveguides on both sides, showed stable CW laser operation at a wavelength of 1.56 /spl mu/m. SA-CBE offers maximum design flexibility, since each device can be fabricated in its own optimized layer stack.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::d76e7e6b2ab3f2be66b50b795379c944 https://doi.org/10.1109/iciprm.1999.773710 Zobrazit plný text záznamu