(Invited) High Speed Copper Electrodeposition for Through Silicon Via(TSV)

Autor:	Masaru Bunya, Kazuo Kondo, Taro Hayashi, Yushi Suzuki, Minoru Takeuchi, Takayuki Tsuchiya, Masao Marunaka, Takeyasu Saito, Naoki Okamoto
Rok vydání:	2012
Předmět:	Materials science chemistry Through-silicon via business.industry Optoelectronics chemistry.chemical_element business Copper
Zdroj:	ECS Transactions. 41:45-51
ISSN:	1938-6737 1938-5862
DOI:	10.1149/1.4717502
Popis:	High-speed copper electrodeposition is needed to optimize the TSV process with a high throughput. To inhibit electrodeposition on the top surface of the TSV, the ODT was microcontact-printed on the top surface. The ODT microcontact-printing effectively inhibits the copper electrodepositon on the top surface. With 1.0 ppm SDDACC, V-shapes were formed in the via cross sections and these shapes lead to bottom-up via filling [1]. Without micro-contact-printing, and with 1.5 ppm SDDACC, V-shapes were again formed in the via cross sections and these shapes lead to bottom-up via filling. We succeeded in filling 10 μm diameter and 70 μm deep vias within 35 minutes without micro- contact-printing. This was achieved by optimizing the SDDACC concentration with CVS measurements. The inhibition layer of the micro-contact-printing does not speed up the TSV electrodeposition. The most important factor to speed up the TSV electrodeposition is optimization of the additives.
Databáze:	OpenAIRE
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