Ga2Se3 treatment of Cu-rich CIGS thin films to fabricate Cu-poor CIGS thin films with large grains and U-shaped Ga distribution
| Autor: | Rujun Sun, Guoan Ren, Ming Zhao, Xiao Peng, Xunyan Lv, Yaowei Wei, Daming Zhuang, Yixuan Wu, Leng Zhang |
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| Rok vydání: | 2018 |
| Předmět: |
010302 applied physics
Materials science business.industry Annealing (metallurgy) Energy conversion efficiency Depth direction chemistry.chemical_element 02 engineering and technology 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Copper indium gallium selenide solar cells Grain size Surfaces Coatings and Films chemistry 0103 physical sciences Optoelectronics Thin film Gallium 0210 nano-technology business Instrumentation |
| Zdroj: | Vacuum. 152:184-187 |
| ISSN: | 0042-207X |
| DOI: | 10.1016/j.vacuum.2018.02.035 |
| Popis: | Cu-rich CIGS thin films were prepared from quaternary CIGS and Cu target, and then converted into Cu-poor CIGS by depositing the Ga2Se3 layer on the Cu-rich CIGS with the subsequent annealing. In this paper, we name the process of converting Cu-rich CIGS into Cu-poor CIGS as Ga2Se3 treatment. The Ga2Se3 treatment brings out two benefits for the CIGS absorbers. It can remove the excess CuxSe phase in the Cu-rich CIGS and don't reduce the grain size of CIGS. That is to say, the Cu-poor CIGS has almost the same size of grain of the Cu-rich CIGS thin films. What's more, the Ga2Se3 treatment can also improve the content of gallium on the surface of CIGS, resulting the U-shaped gallium distribution along the depth direction. The thickness of Ga2Se3 layer has been optimized which can result in the highest conversion efficiency of 10.6% in Cu-rich CIGS based solar cells. |
| Databáze: | OpenAIRE |
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