High-density plasma patterning of low dielectric constant polymers: A comparison between polytetrafluoroethylene, parylene-N, and poly(arylene ether)
| Autor: | William R. Entley, T. E. F. M. Standaert, J. W. Bartz, P. J. Matsuo, Ronald J. Gutmann, Toh-Ming Lu, Gottlieb S. Oehrlein, Xi Li, John Giles Langan, C. T. Rosenmayer |
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| Rok vydání: | 2001 |
| Předmět: |
Permittivity
chemistry.chemical_classification Polytetrafluoroethylene Materials science Arylene Surfaces and Interfaces Polymer Dielectric Condensed Matter Physics Surfaces Coatings and Films chemistry.chemical_compound Adsorption Parylene chemistry Chemical engineering Polymer chemistry Inductively coupled plasma |
| Zdroj: | Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 19:435-446 |
| ISSN: | 1520-8559 0734-2101 |
| Popis: | The pattern transfer of SiO2 hard masks into polytetrafluoroethylene, parylene-N, and poly(arylene ether) (PAE-2) has been characterized in an inductively coupled plasma source. Selected results obtained with blanket parylene-AF4 films are included in this work. These dielectrics offer a relatively low dielectric constant (k∼2–3) and are candidate materials for use as intra- and interlayer dielectrics for the next generations of high-speed electronic devices. Successful patterning conditions were identified for Ar/O2 and N2/O2 gas mixtures. It was found that the formation of straight sidewalls in Ar/O2 discharges relies on the redeposition of oxygen-deficient etch products on the feature sidewall. Furthermore, the etch rates of parylene-N, parylene-F, and PAE-2 for blanket and patterned films could be captured by a semiempirical surface coverage model, which balances the adsorption rate of oxygen and the ion-induced desorption rate of oxygenated etch products. |
| Databáze: | OpenAIRE |
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