Sub-45 nm SiO2Etching with Stacked-Mask Process Using High-Bias-Frequency Dual-Frequency-Superimposed RF Capacitively Coupled Plasma
| Autor: | Hisataka Hayashi, Itsuko Sakai, Akihiro Kojima, Tokuhisa Ohiwa, Keisuke Kikutani, Akio Ui, Takashi Ohashi, Junko Abe |
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| Rok vydání: | 2008 |
| Předmět: |
Physics and Astronomy (miscellaneous)
business.industry Chemistry General Engineering Process (computing) Analytical chemistry General Physics and Astronomy Ion Carbon film Etching (microfabrication) Optoelectronics Dual frequency Capacitively coupled plasma business Energy (signal processing) Line (formation) |
| Zdroj: | Japanese Journal of Applied Physics. 47:8026-8029 |
| ISSN: | 1347-4065 0021-4922 |
| Popis: | By using a stacked mask process (S-MAP) with spun-on-carbon (SOC) film, 38 nm line patterns were successfully etched by controlling the ion energy using high-bias-frequency dual-frequency-superimposed (DFS) rf capacitively coupled plasma in combination with the low hydrogen content SOC film. It was found that ions with higher energy enhance the fluorination of SOC and induce pattern wiggling under fluorine exposure. By using a higher bias frequency to control the ion energy distribution and reduce the maximum ion energy, the SOC pattern wiggling was effectively suppressed. |
| Databáze: | OpenAIRE |
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