Surface reconstruction switching induced by tensile stress of DB steps: From Ba/Si(0 0 1)-2×3 to Ba/Si(0 0 1)-4° off-3×2
| Autor: | Jae M. Seo, Rui Zhang, Altaibaatar Lkhagvasuren, Hidong Kim |
|---|---|
| Rok vydání: | 2018 |
| Předmět: |
Materials science
Ionic radius Photoemission spectroscopy General Physics and Astronomy 02 engineering and technology Surfaces and Interfaces General Chemistry Substrate (electronics) 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Surfaces Coatings and Films law.invention Crystallography Adsorption law 0103 physical sciences Atom Scanning tunneling microscope 010306 general physics 0210 nano-technology Vicinal Surface reconstruction |
| Zdroj: | Applied Surface Science. 439:122-127 |
| ISSN: | 0169-4332 |
| DOI: | 10.1016/j.apsusc.2017.12.264 |
| Popis: | The alkaline-earth metal adsorption on Si(0 0 1) has attracted much interest for finding a proper template in the growth of high- κ and crystalline films. Up to now on the flat Si(0 0 1) surface with double domains and single-layer steps, the adsorbed Ba atoms are known to induce the 2 × 3 structure through removing two Si dimers and adding a Ba atom per unit cell in each domain. In the present investigation, the Si(0 0 1)-4° off surface with D B steps and single domains has been employed as a substrate and the reconstruction at the initial stage of Ba adsorption has been investigated by scanning tunneling microscopy and synchrotron photoemission spectroscopy. On this vicinal and single domain terrace, a novel 3 × 2 structure rotated by 90° from the 2 × 3 structure has been found. Such a 3 × 2 structure turns out to be formed by adding a Ba atom and a Si dimer per unit cell. This results from the fact that the adsorbed Ba2+ ions with a larger ionic radius relieve tensile stress on the original Si dimers exerted by the rebonded atoms at the D B step. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|
Full Text from ScienceDirect