Calculation of electric-field strength profiles in GaAs:Cr epitaxial-diffusion structures

Autor:	V. P. Germogenov, I. V. Ponomarev
Rok vydání:	2008
Předmět:	Materials science Condensed matter physics Astrophysics::High Energy Astrophysical Phenomena External bias General Physics and Astronomy Electron Epitaxy Acceptor Condensed Matter::Materials Science Impurity Electric field Atomic physics Diffusion (business) Layer (electronics)
Zdroj:	Russian Physics Journal. 51:994-999
ISSN:	1573-9228 1064-8887
DOI:	10.1007/s11182-009-9126-6
Popis:	The electric-field strength profiles are calculated for the structures used in X-ray detectors produced by diffusion of the deep acceptor Cr impurity into an n-GaAs epitaxial layer. The effects of diffusion temperature, external bias, and the ratio of electron and hole emission coefficients on the distribution of electric-field strength in the structure are examined.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::d73b830c41f368cbcccfd19c5e78a234 https://doi.org/10.1007/s11182-009-9126-6 Zobrazit plný text záznamu Plný text ve formátu PDF