Wafer Level Modeling of Electrochemical-Mechanical Polishing (ECMP)

Autor:	Duane S. Boning, Daniel Truque, Xiaolin Xie
Rok vydání:	2007
Předmět:	Work (thermodynamics) Materials science Discretization business.industry chemistry.chemical_element Conductance Polishing Copper chemistry Optoelectronics Wafer business Current density Voltage
Zdroj:	MRS Proceedings. 991
ISSN:	1946-4274 0272-9172
DOI:	10.1557/proc-0991-c11-04
Popis:	In this work, we propose a wafer level dynamic ECMP model based on time-evolving current density distributions across the wafer. The copper layer on the wafer surface is discretized, and the potential and current density distributions are calculated based on the applied voltage zones and metal film thicknesses across the wafer. The copper removal rate is proportional to the current density, and thus the copper thickness (and conductance) can be calculated as a function of position on the wafer and polish time. Using a time-stepping simulation, the model is able to capture the wafer level non-uniformity and time-dependence of ECMP removal. The model is also able to capture the time-varying voltage zones used in ECMP, and can be used to find optimal voltage zone control schemes to achieve improved wafer-level uniformity.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::d73a0130dc795b4ac065601b3ac21e16 https://doi.org/10.1557/proc-0991-c11-04 Zobrazit plný text záznamu Full text from SpringerLink