Highly parallel stateful Boolean logic gates based on aluminum-doped self-rectifying memristors in a vertical crossbar array structure

Autor: Taegyun Park, Seung Soo Kim, Byeol Jun Lee, Tae Won Park, Hae Jin Kim, Cheol Seong Hwang
Rok vydání: 2023
Předmět:
Zdroj: Nanoscale. 15:6387-6395
ISSN: 2040-3372
2040-3364
DOI: 10.1039/d3nr00271c
Popis: Aluminum-doped self-rectifying memristors in vertical arrays enable in-memory computing that can synthesize multi-layered Boolean logic functions in parallel, suppressing the sneak current.
Databáze: OpenAIRE