| Autor: |
G.S. Kousik, P.K. Bhattacharya, R.P. Nandakumar |
| Rok vydání: |
1992 |
| Předmět: |
|
| Zdroj: |
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 319:346-349 |
| ISSN: |
0168-9002 |
| Popis: |
MOSFETs of channel lengths from 1.75 to 10 μm exposed to synchrotron radiation at Aladdin, Wisconsin (22.7 A critical wavelength for 800 MeV electrons) to a total incident energy of 120 mJ/cm 2 show the post-irradiated threshold voltage shifts to be dependent on the channel length. Threshold voltages for different substrate bias ranging from 0 to −3 V show that the nature of the curves is the same for all the channel lengths but the shift is different. The short channel devices show a lesser threshold voltage shift compared to the longer devices. This is attributed to a smaller number of charges produced in the oxide after irradiation in the case of the short channel devices since more of the electron-hole pairs produced by X-rays are lost to the field oxide regions on either side of the gate insulator. Also, for the same reason, the effective channel length is enhanced. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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