Localization of crystallographic defects in failed laser diodes using optical probes
| Autor: | L. Serra, R. De Franceschi, P. Montangero, Guido Manzone, G.A. Azzini, Michele Liberatore, M. Mancini |
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| Rok vydání: | 1993 |
| Předmět: |
Materials science
Photoluminescence Optical beam-induced current business.industry Physics::Optics Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Laser Semiconductor laser theory Gallium arsenide law.invention chemistry.chemical_compound Optics chemistry Optical microscope law Optoelectronics Semiconductor optical gain business Diode |
| Zdroj: | SPIE Proceedings. |
| ISSN: | 0277-786X |
| DOI: | 10.1117/12.146911 |
| Popis: | A precise localization of dark line defects in failed AlGaAs/GaAs laser diodes has been achieved by means of scanning optical microscope (SOM) techniques. The analytical scheme has been based on optical beam induced current (OBIC) and photoluminescence (PL) at three photon probes and different device bias voltages. The imaging analysis has been associated to a progressive chemical etching of the semiconductor material. Numerical simulation of the experiment has been performed for results interpretation. Results are in good agreement with previously published theories and with TEM analysis. The proposed analytical procedure can be applied to a wide variety of devices. |
| Databáze: | OpenAIRE |
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