Recombination mechanisms in InAs/InP quantum dash lasers studied using high hydrostatic pressure

Autor: Johann Peter Reithmaier, Alfred R. Adams, Stephen J. Sweeney, Alfred Forchel, Igor P. Marko, Andre Somers, B. N. Murdin, S. R. Jin, R. Schwertberger
Rok vydání: 2004
Předmět:
Zdroj: physica status solidi (b). 241:3427-3431
ISSN: 1521-3951
0370-1972
Popis: Two types of InAs quantum dash lasers grown on InP substrates with lasing wavelengths of 1.52 pm and 1.76 μm were studied. In both laser types the threshold current density, J th , was about 2 kA/cm 2 at room temperature and had a similar temperature sensitivity (To was about 80 K in the range T= 120-250 K, and To = 60-70 K from 250 to 300 K). Measurements of the spontaneous emission from a window milled in a substrate contact showed that J rad , the radiative part of J th , is almost temperature independent and less than 5% of J th at T = 295 K, demonstrating that the relatively large value of J th and its temperature sensitivity must be due to non-radiative recombination processes. However, despite the similar temperature behaviour of the lasers, their pressure dependences were very different showing that in the 1.52 μm lasers, pressure independent defect related recombination outside the dashes due to thermal carrier spill-over or thermal leakage dominates, while in the 1.76 μm quantum dash laser 60% of J th is due to Auger recombination.
Databáze: OpenAIRE
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