Blue electroluminescence from MOS capacitors with Si-implanted SiO2
| Autor: | Kiyoshi Nishihara, Satoshi Iwatsubo, Takashi Ohzone, Masaharu Kawabe, Hideyuki Iwata, Toshihiro Matsuda |
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| Rok vydání: | 2004 |
| Předmět: |
Materials science
business.industry Wavelength range Electroluminescence Condensed Matter Physics Spectral line Electronic Optical and Magnetic Materials law.invention Capacitor Distribution function Interference (communication) law Materials Chemistry Optoelectronics Electrical and Electronic Engineering business Visible spectrum |
| Zdroj: | Solid-State Electronics. 48:1933-1941 |
| ISSN: | 0038-1101 |
| DOI: | 10.1016/j.sse.2004.05.058 |
| Popis: | Electroluminescence (EL) spectra under direct-current (dc) operation are reported for Au/SiO 2 /p-Si MOS capacitors with 50 nm Si-implanted SiO 2 . The transparent Au gate not only improves measurable wavelength range but also suppresses interference effects among MOS layers. The clear and smooth EL spectra have been measured and the EL spectrum was analyzed by fitting five Gaussian distribution functions. A model of EL emission mechanism is proposed for the Si-implanted MOS EL device. Furthermore, photomicrograph of blue EL emission is given, and a possibility of visible light emitting microdisplay device is demonstrated. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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