Superconductivity of bilayer titanium/indium thin film grown on SiO 2 /Si (001)
| Autor: | Shiyong Tan, Wen Zhang, Xie-Gang Zhu, Rui-Zhu Yang, Zhao-Hong Mo, Liang Wang, Xiong Zhonghua, Zhong-Guo Ren, Xiaodong Wang, Qi An, Yun Zhang, Chunyu Guo, Hongjun Zhang, Xinchun Lai, Wei Feng, Yi Liu, Chao Lu |
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| Rok vydání: | 2018 |
| Předmět: |
Materials science
Bilayer Transition temperature Analytical chemistry General Physics and Astronomy chemistry.chemical_element Substrate (electronics) Atmospheric temperature range 010502 geochemistry & geophysics Epitaxy 01 natural sciences chemistry 0103 physical sciences Thin film 010306 general physics Indium 0105 earth and related environmental sciences Titanium |
| Zdroj: | Chinese Physics B. 27:067403 |
| ISSN: | 1674-1056 |
| DOI: | 10.1088/1674-1056/27/6/067403 |
| Popis: | Bilayer superconducting films with tunable transition temperature (T c) are a critical ingredient to the fabrication of high-performance transition edge sensors. Commonly chosen materials include Mo/Au, Mo/Cu, Ti/Au, and Ti/Al systems. Here in this work, titanium/indium (Ti/In) bilayer superconducting films are successfully fabricated on SiO2/Si (001) substrates by molecular beam epitaxy (MBE). The success in the epitaxial growth of indium on titanium is achieved by lowering the substrate temperature to −150 °C during indium evaporation. We measure the critical temperature under a bias current of 10 μA, and obtain different superconducting transition temperatures ranging from 645 mK to 2.7 K by adjusting the thickness ratio of Ti/In. Our results demonstrate that the transition temperature decreases as the thickness ratio of Ti/In increases. |
| Databáze: | OpenAIRE |
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