Defect migration in layered bisulfate and hydrosilicate crystals

Autor:	M. P. Tonkonogov, V. M. Timokhin
Rok vydání:	1991
Předmět:	Materials science Hydrogen Proton Hydrogen bond Relaxation (NMR) Physics::Optics General Physics and Astronomy chemistry.chemical_element Dielectric Ion Crystal Crystallography Nuclear magnetic resonance chemistry Electric field
Zdroj:	Soviet Physics Journal. 34:648-652
ISSN:	0038-5697
Popis:	For the first time, the migration of ions inside a crystal in an electric field is explained by sequential proton transfer along hydrogen bonds and the anion sublattice. It is determined which ions are responsible for the low temperature dielectric relaxation in layered crystals with hydrogen bonds.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::d6f3b7ca0d52eb6ddbe0b4c1f8a5b372 https://doi.org/10.1007/bf00898002 Zobrazit plný text záznamu