The influence of deep levels on the admittance of MIS structures with sol-gel TiO2 insulator film

Autor:	A. Szekeres, Mariuca Gartner, I. Minkov, C. Parlog, K. Ivanova, S. Simeonov
Rok vydání:	2008
Předmět:	Permittivity Materials science Silicon business.industry Analytical chemistry Conductance chemistry.chemical_element Insulator (electricity) Dielectric Capacitance chemistry Optoelectronics business Voltage Sol-gel
Zdroj:	2008 International Semiconductor Conference.
DOI:	10.1109/smicnd.2008.4703390
Popis:	The admittance- voltage characteristics of MIS structures with TiO2(La) dielectric films, have been measured in the 100 Hz-100 kHz test voltage frequency range. It has been established that the dielectric constant of these dielectric films increases with the decrease of the test voltage frequency. The conductance of these MIS structures increases with the test voltage frequency in the same 100 Hz-100 kHz frequency range. These admittance measurements are used to estimate the density of deep levels, responsible for observed dependence of the dielectric constant on the test voltage frequency in investigated MIS structures.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::d6f0504717275c6c6cccf9963b12948c https://doi.org/10.1109/smicnd.2008.4703390 Zobrazit plný text záznamu