Influence of hydrogen dilution on the growth of nanocrystalline silicon carbide films by low-frequency inductively coupled plasma chemical vapor deposition
| Autor: | Kostya Ostrikov, Shuyan Xu, Shiyong Huang, Yuping Ren, Qijin Cheng, Jidong Long, J.W. Chai, P.P. Rutkevych |
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| Rok vydání: | 2008 |
| Předmět: |
Materials science
Hydrogen Silicon Metals and Alloys Nanocrystalline silicon Analytical chemistry chemistry.chemical_element Surfaces and Interfaces Chemical vapor deposition Silane Surfaces Coatings and Films Electronic Optical and Magnetic Materials Carbide chemistry.chemical_compound chemistry Materials Chemistry Silicon carbide Inductively coupled plasma |
| Zdroj: | Thin Solid Films. 516:5991-5995 |
| ISSN: | 0040-6090 |
| Popis: | Nanocrystalline silicon carbide (nc-SiC) films are prepared by low-frequency inductively coupled plasma chemical vapor deposition from feedstock gases silane and methane diluted with hydrogen at a substrate temperature of 500 °C. The effect of different hydrogen dilution ratios X [hydrogen flow (sccm) / silane + methane flow (sccm)] on the growth of nc-SiC films is investigated by X-ray diffraction, scanning electron microscopy, Fourier transform infrared (FTIR) spectroscopy, and X-ray photoelectron spectroscopy (XPS). At a low hydrogen dilution ratio X , cubic silicon carbide is the main crystal phase; whereas at a high hydrogen dilution ratio X , hexagonal silicon carbide is the main crystal phase. The SiC crystal phase transformation may be explained by the different surface mobility of reactive Si-based and C-based radicals deposited at different hydrogen dilution ratios X . The FTIR and XPS analyses show that the Si–C bonds are the main bonds in the films and elemental composition of SiC is nearly stoichiometric with almost equal share of silicon and carbon atoms. |
| Databáze: | OpenAIRE |
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