| Autor: |
K. Takemasa, T. Yamamoto, Reio Mochida, M. Sugawara, Takeo Kageyama, Yu Tanaka, Kenichi Nishi, M. Yamaguchi, Yasuhiko Arakawa, Y. Maeda |
| Rok vydání: |
2011 |
| Předmět: |
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| Zdroj: |
2011 Conference on Lasers and Electro-Optics Europe and 12th European Quantum Electronics Conference (CLEO EUROPE/EQEC). |
| DOI: |
10.1109/cleoe.2011.5943701 |
| Popis: |
High temperature (>125°C) resistant semiconductor lasers are attractive as light sources in a variety of harsh environments [1]. Long-wavelength lasers operating under higher temperature of more than 200°C combined with silica-based optical fibers can expand application fields of data transmission and optical sensing to severe environments like space or deep underground. Temperature dependence of the threshold current of a semiconductor laser can be drastically reduced by employing quantum-dot (QD) active layers [2, 3]. Recent progress in epitaxial growth technology of QDs enhances the laser characteristics [3, 4]. Here, we report extremely high temperature continuous-wave (CW) operation up to 220°C of QD lasers emitted at 1300-nm-range for the first time by enhancing gain and increasing the quantized-energy separation of the QD active layers. Thus, QD lasers are proved to be suitable light sources for high temperature resistant applications. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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