Investigation of Low-Temperature Cu–Cu Direct Bonding With Pt Passivation Layer in 3-D Integration
| Autor: | Ying-Ting Chung, Tsung-Yi Kuo, Kuan-Neng Chen, Tzu-Chieh Chou, Yu-Wei Liu, Demin Liu, Zhong-Jie Hong, Han-Wen Hu |
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| Rok vydání: | 2021 |
| Předmět: |
010302 applied physics
Materials science Passivation 02 engineering and technology Direct bonding Integrated circuit 021001 nanoscience & nanotechnology 01 natural sciences Industrial and Manufacturing Engineering Grain size Electronic Optical and Magnetic Materials law.invention Atomic layer deposition Chemical engineering Bonding strength law 0103 physical sciences Surface roughness Electrical and Electronic Engineering 0210 nano-technology Layer (electronics) |
| Zdroj: | IEEE Transactions on Components, Packaging and Manufacturing Technology. 11:573-578 |
| ISSN: | 2156-3985 2156-3950 |
| DOI: | 10.1109/tcpmt.2021.3069085 |
| Popis: | Pt has been investigated as a metal passivation material to achieve low-temperature Cu–Cu direct bonding process. With 10-nm Pt passivation layer capping on Cu surface, a good bonding surface with no oxides and small grain size can be obtained. During the low-temperature bonding process, Cu atoms diffuse through the passivation layer and form a new layer without any pretreatment. This bonding scheme with Pt passivation layer provides a solution for Cu low-temperature bonding, with excellent bonding strength, good electrical performance, and ability to endure temperature variation. In addition, both chip- and wafer-level bonding process have been successfully demonstrated, showing a high potential to be applied on 3-D integrated circuit (IC) and heterogeneous integration. |
| Databáze: | OpenAIRE |
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