Double-resonance determination of electrong-factors in muonium shallow-donor states
| Autor: | Stephen J. Cox, James S. Lord, R. C. Vilão, J. Piroto Duarte, H. V. Alberto |
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| Rok vydání: | 2004 |
| Předmět: | |
| Zdroj: | Journal of Physics: Condensed Matter. 16:S4707-S4720 |
| ISSN: | 1361-648X 0953-8984 |
| Popis: | The discovery and significance of weakly bound muonium states with low hyperfine constants in a number of compound semiconductors of the II–VI and III–V (nitride) families are briefly reviewed. With ionization energies of several tens of meV, these imply that their hydrogen counterparts would act as shallow donors and that hydrogen could, either as an impurity or a deliberate dopant, be a source of electronic conductivity in the relevant materials. We examine whether, in their neutral undissociated states, the electron orbitals can be described in the effective-mass approximation and are correspondingly dilated, made up of conduction-band states. The best evidence that this is so comes from novel double-resonance measurements of the electron g-factors, devised for the ISIS pulsed muon source, and so far undertaken for ZnO, CdS, CdSe and CdTe. The respective values are |g| = 1.97, 1.86, 0.51 and 1.68; these results discount orbitally quenched compact states and are fully consistent with literature values for known shallow dopants in these compounds. They also illustrate the potential for µSR detection and characterization of such states in new electronic materials where hydrogen-induced conductivity is suspected or predicted. |
| Databáze: | OpenAIRE |
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