| Autor: |
T. Bachmann, W. Witthuhn, S. Schippel, Werner Wesch, U. Richter, Elke Wendler |
| Rok vydání: |
1994 |
| Předmět: |
|
| Zdroj: |
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 89:168-173 |
| ISSN: |
0168-583X |
| DOI: |
10.1016/0168-583x(94)95166-7 |
| Popis: |
GaAs and InP crystals were implanted with 1.6 MeV Ar+ and 2.0 MeV Se2+ ions in the dose range of 1 × 1012 cm−2 up to 3 × 1015 cm−2 at room temperature. The investigation of the resulting damage after implantation by means of Rutherford backscatttering spectrometry shows that the same amount of nuclear energy deposition leads to different damage in the two materials for the two ion species. In GaAs pronounced self-annealing occurs which is different for the different depth regions of the implanted layer. Part of the samples were short time annealed and show an activation of 40% and high mobilities in the low ion fluence region. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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