Plasma sputtering of polycrystalline Pb1−xSnxTe thin films grown on glass substrates using hot wall deposition
| Autor: | V. V. Naumov, V. F. Gremenok, I. N. Tsyrelchuk, I. I. Amirov, E. S. Gorlachev, G A Dubov, S. P. Zimin |
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| Rok vydání: | 2014 |
| Předmět: |
Materials science
Analytical chemistry Substrate (electronics) Condensed Matter Physics Electronic Optical and Magnetic Materials Tin telluride chemistry.chemical_compound Lattice constant chemistry Sputtering Materials Chemistry Crystallite Electrical and Electronic Engineering Thin film Inductively coupled plasma Deposition (law) |
| Zdroj: | Semiconductor Science and Technology. 29:075020 |
| ISSN: | 1361-6641 0268-1242 |
| DOI: | 10.1088/0268-1242/29/7/075020 |
| Popis: | In this work the investigations of the argon inductively coupled plasma sputtering of the Pb1−x Sn x Te thin films with the composition variation of x = 0.16–0.95 grown by hot wall deposition technique on glass substrates were carried out. As-grown films had a columnar polycrystalline structure with the grain lateral dimensions of 0.2–5.0 μm, and the dependence of the lattice constant on composition x had a linear behaviour described by the Vegard's law. Energy dispersive x-ray microanalysis showed the presence of 5–8 at.% of oxygen in the films, which can be accumulated from the ambient air or from the substrate in the inter-grain boundaries. A phenomenon of a sputtering rate decrease for the polycrystalline lead tin telluride films in comparison to the single-crystal films is discussed. A novel important phenomenon of the formation of nanostructure arrays on the surface of the Pb1−x Sn x Te thin films with the dependence on the sputtering rate during plasma treatment is reported. |
| Databáze: | OpenAIRE |
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