Delamination of Si by high dose H-ion implantation through thin SiO2 film (ESR characterization)
| Autor: | Tomio Izumi, Shiho Sasaki, Tohru Hara |
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| Rok vydání: | 2002 |
| Předmět: |
Materials science
Silicon Hydrogen Thermal desorption spectroscopy Annealing (metallurgy) Mechanical Engineering Analytical chemistry Dangling bond chemistry.chemical_element Condensed Matter Physics law.invention Ion implantation chemistry Mechanics of Materials law General Materials Science Thin film Electron paramagnetic resonance |
| Zdroj: | Materials Science and Engineering: B. :160-163 |
| ISSN: | 0921-5107 |
| Popis: | Delamination of the silicon substrate has been studied by electron spin resonance (ESR) and thermal desorption spectroscopy (TDS) methods. The silicon surface layer was implanted with high dose H + ions through a thin SiO 2 layer. The ESR signals observed from the as-implanted silicon surface layer were composed of two kinds of paramagnetic defects, that is, E′-center ( g =2.0009, Δ H pp =3.0 Oe) and hydrogen associated Si dangling bond (P H -center, g =2.0066, Δ H pp =7.0 Oe). The signal intensities of the E′-center and P H -center disappeared after annealing at 400 °C. After the disappearance of these ESR centers, a new ESR center with an oxygen associated Si dangling bond ( g =2.0045) was observed, and remained stable even after 1000 °C annealing. The desorption of hydrogen from the Si substrate was observed after annealing at 500 °C, at which temperature the P H -center disappeared. |
| Databáze: | OpenAIRE |
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