| Autor: |
乔彦斌 Qiao Yan-bin, 张建伟 Zhang Jian-wei, 吴艳艳 Wu Yan-yan, 魏光华 Wei Guang-hua, 冯士维 Feng Shi-wei |
| Rok vydání: |
2013 |
| Předmět: |
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| Zdroj: |
Chinese Journal of Luminescence. 34:1051-1056 |
| ISSN: |
1000-7032 |
| DOI: |
10.3788/fgxb20133408.1051 |
| Popis: |
The current crowding effect of low-power GaN base LEDs was investigated.It is found that LED module(eight LEDs in series as a set of group) suffered voltage surge sometimes presented current leakage failure.Pspice was applied to simulate LED module.It showed the damaged samples bore more voltage and power compared with the normal results.The orientation of leakage current of LED chip was studied via Emission Microscope(EMMI),the result indicated the leakage current intensively spreaded on the end of the p-type extended electrode.We assumed that the damaged route of voltage surged through the quantum well of LED,and the un-distribution current led to the effect of current crowding near the p-type extended electrode,which aggravated the injury severity of pn junction.Well-distributed current could improve the reliability of LED.Finally,the failure analysis of LED with differential negative resistance effect in the current-voltage characteristics was given. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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