Spectroscopic ellipsometric characterization of organic films obtained via organic vapor phase deposition

Autor:	N. Meyer, Michael Heuken, H.-H. Johannes, Cameliu Himcinschi, Wolfgang Kowalsky, Dietrich R. T. Zahn, G. Strauch, Marion Friedrich, S. Hartmann, M. Gersdorff, M. Schwambera
Rok vydání:	2005
Předmět:	Materials science Silicon Band gap Analytical chemistry chemistry.chemical_element General Chemistry Chemical vapor deposition chemistry Phase (matter) Deposition (phase transition) General Materials Science Wafer Thin film Absorption (electromagnetic radiation)
Zdroj:	Applied Physics A. 80:551-555
ISSN:	1432-0630 0947-8396
Popis:	Thin films of Tris(8-hydroxyquinoline)-aluminum(III) (Alq3) and N,N′-Di-[(1-naphthyl)-N,N′-diphenyl]-(1,1′-biphenyl)-4,4′-diamine (α-NPD ) were deposited on large-area silicon substrates by means of the recently developed organic vapor phase deposition (OVPD) method. Variable-angle spectroscopic ellipsometry was used to measure the optical constants of OVPD Alq3 and α-NPD layers in the 0.8–5 eV energy range. The absorption onset which defines the lower limit of the optical band gap was found to be at ∼2.65 eV and ∼2.9 eV for Alq3 and α-NPD , respectively. Additionally, the thicknesses of the layers as well as the thickness profiles of the organic thin films were determined along the 8′′ diameter of the wafers. The thickness analysis revealed large-area uniform deposition of the films.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::d68cb269b79fa6af1eaf03741aca2895 https://doi.org/10.1007/s00339-004-2973-7 Zobrazit plný text záznamu Plný text ve formátu PDF