Deuteron implantation into hexagonal silicon carbide: defects and deuterium behaviour
| Autor: | N. Tomozeiu, A. van Veen, A. Shiryaev, Romain Delamare, T. Bus, W. M. Arnoldbik, F. H. P. M. Habraken, Esidor Ntsoenzok, Antonio Rivera, M.A. van Huis |
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| Rok vydání: | 2002 |
| Předmět: |
Materials science
Thermal desorption Condensed Matter Physics Molecular physics Crystallographic defect Electronic Optical and Magnetic Materials Ion Elastic recoil detection Condensed Matter::Materials Science chemistry.chemical_compound Positron Ion implantation chemistry Deuterium Silicon carbide Physics::Atomic Physics Atomic physics Instrumentation |
| Zdroj: | The European Physical Journal Applied Physics. 23:11-18 |
| ISSN: | 1286-0050 1286-0042 |
| DOI: | 10.1051/epjap:2002116 |
| Popis: | Results of the comprehensive study of deuterium-implanted hexagonal SiC (4H and 6H) using optical absorption and infrared measurements, elastic recoil detection analysis, thermal desorption and positron annihilation spectroscopies are reported. It is shown that implanted deuterium mainly forms bonds with lattice atoms. The amount of deuterium in the form of interstitial molecules and in vacancies is considerably smaller. Ion implantations with fluences exceeding 10 10 D + /cm -2 create point defects in concentrations sufficiently high for complete positron trapping. Recrystallisation of the amorphised SiC does not remove the positron traps. |
| Databáze: | OpenAIRE |
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