Defect reduction in (112̄0) nonpolar a-plane GaN grown on r-plane sapphire using TiN interlayers
| Autor: | Lin-An Yang, J.C. Ma, JunShuai Xue, Xiaowei Zhou, Ziyang Liu, Shiliu Xu, Yan-Rong Cao, Feng Bao, Yang Hao, Jincheng Zhang, Jinfeng Zhang |
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| Rok vydání: | 2011 |
| Předmět: |
Materials science
Analytical chemistry chemistry.chemical_element Chemical vapor deposition Surface finish Condensed Matter Physics Epitaxy Inorganic Chemistry Full width at half maximum Crystallography chemistry Transmission electron microscopy Materials Chemistry Sapphire Metalorganic vapour phase epitaxy Tin |
| Zdroj: | Journal of Crystal Growth. 327:94-97 |
| ISSN: | 0022-0248 |
| DOI: | 10.1016/j.jcrysgro.2011.06.013 |
| Popis: | We report on the use of TiN interlayer to reduce the threading dislocation density in nonpolar a-plane GaN material grown by metal organic chemical vapor deposition (MOCVD), where the interlayer was formed by depositing the Ti metal on a GaN template followed by nitridize. By means of high resolution X-ray diffraction, transmission electron microscopy, and atomic force microscopy analyses, we found that the nonpolar a-plane GaN epitaxial grown on 10 nm-thick TiN interlayer, both on-axis and off-axis, exhibits a significant reduction in the full width at half maximum, the basal plane stacking faults (BSF), the threading dislocation density, and the root-mean-square roughness, respectively. |
| Databáze: | OpenAIRE |
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