Deuterium diffusion in Mg-doped GaN layers grown by metalorganic vapour phase epitaxy
| Autor: | François Jomard, M. Barbé, P. de Mierry, Alexander Y. Polyakov, Z. Teukam, B. Theys |
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| Rok vydání: | 2001 |
| Předmět: |
inorganic chemicals
Hydrogen Doping technology industry and agriculture Analytical chemistry chemistry.chemical_element Plasma Condensed Matter Physics Electronic Optical and Magnetic Materials chemistry Deuterium Materials Chemistry lipids (amino acids peptides and proteins) Redistribution (chemistry) Metalorganic vapour phase epitaxy Electrical and Electronic Engineering |
| Zdroj: | Semiconductor Science and Technology. 16:L53-L56 |
| ISSN: | 1361-6641 0268-1242 |
| Popis: | Metalorganic-vapour-phase-epitaxy-grown GaN layers have been exposed to a deuterium radio-frequency plasma. It is shown that in a certain plasma configuration, deuterium diffuses significantly inside the samples as long as they are Mg doped. But, on the other hand, in non-intentionally doped samples, in equivalent plasma conditions, deuterium accumulates just beneath the surface. It is also shown that in GaN:Mg, the diffusing deuterium species interact with native hydrogen and are responsible for its redistribution inside the layer. |
| Databáze: | OpenAIRE |
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