| Autor: |
H. Horie, Masaharu Nagai, Toshiro Hayakawa, K. Matsumoto, M. Morishima |
| Rok vydání: |
1992 |
| Předmět: |
|
| Zdroj: |
Surface Science. 267:8-12 |
| ISSN: |
0039-6028 |
| DOI: |
10.1016/0039-6028(92)91076-n |
| Popis: |
AlGaAs layers have been grown on GaAs(100) and 0.5° -misoriented GaAs(111)B substrates by molecular beam epitaxy using As 4 and As 2 . The quality of (111)B-oriented AlGaAs becomes poorer when more As-stabilized growth conditions are employed; such as higher As pressure, lower substrate temperature and the use of As 2 instead of As 4 . We propose a model where the As-trimer structure of As-stabilized (111)B surface with the (2 × 2) recoonstruction disturbs the incorporation of group III adatoms into lattice sites. In order to confirm this model, we have grown GaAs layers with thin AlAs marking layers over mesa-shaped GaAs(100) substrates with (111)B and (111)A side walls, and observed that the growth rate of GaAs on the (111)B face is very much reduced by using As 2 as compared with the growth using As 4 . This indicates the difficulty of Ga incorporation into the (111)B face, which is not the case for the (111)A face. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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