| Autor: |
R.J. De Angelis, Todd S. Gross, V. K. Mathews, O. W. Dillon, Chi-Tay Tsai |
| Rok vydání: |
1990 |
| Předmět: |
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| Zdroj: |
Mechanical Behavior of Materials ISBN: 9789401073806 |
| Popis: |
During the growth of CZ silicon crystals, dislocation motion and generation are induced by the thermal stresses which arise from rapid cooling from the solidification temperature. These defects limit the fraction of acceptable silicon device chips obtained from a crystal. Current semiconductor technology is restrained by the lack of a predictive material model that can reliably calculate the dislocation motion and multiplication in CZ material at temperature close to the melting point. The concepts of Haasen and Sumino are modified to predict axial tensile results in CZ silicon up to 1300 °C. This modified formulation is the basis of the constitutive model presented. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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